Category :
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max) :
100 mA
Transistor Type :
NPN - Pre-Biased
Mounting Type :
Surface Mount
Package :
Tape & Reel (TR)
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max) :
50 V
Supplier Device Package :
VESM
Resistor - Base (R1) :
47 kOhms
Mfr :
Toshiba Semiconductor and Storage
Resistor - Emitter Base (R2) :
22 kOhms
Current - Collector Cutoff (Max) :
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 10mA, 5V
Base Product Number :
RN1109
Description :
TRANS PREBIAS NPN 50V 0.1A VESM
Shipping Method :
LCL, AIR, FCL, Express
Payment Terms :
L/C, D/A, D/P, T/T, Western Union,