The tungsten sputtering target is an important substrate for the tungsten oxide film to realize its functional transition in the semiconductor device. Due to the high melting point of tungsten, tungsten targets are mainly prepared by powder metallurgy

Due to its high temperature stability, high electron transport resistance and high electron emission coefficient, refractory metal tungsten and tungsten alloys have been widely used in semiconductor large scale integrated circuit manufacturing. High-purity tungsten and tungsten alloy targets for semiconductors. The application fields, performance requirements and preparation methods of the materials were analyzed in detail, and the development trend was prospected. High-purity tungsten and tungsten alloy targets are mainly used to manufacture gate electrodes, connection wirings and diffusion barriers of semiconductor integrated circuits. Etc.,

there are extremely high requirements on the purity of materials, impurity content, density, grain size and grain structure uniformity. High-purity tungsten and tungsten alloy targets mainly use hot pressing, hot isostatic pressing, etc. By means of medium-frequency sintering + pressure processing, high-purity, high-density tungsten targets can be prepared, but grain size and grain structure uniformity control, is not as good as tungsten targets prepared by hot isostatic pressing .

Sintered tungsten target for sputtering, characterized in that it exhibits a relative density of 99 % or more, an average crystal grain diameter of 100 m or less, an oxygen content of 20 ppm or less and a deflection force of 500 MPa or more and a method for preparing the tungsten target with stability at a low cost, which uses improved production conditions for a raw material tungsten powder and improved sintering conditions. The sintered tungsten target has a high level of density and a high degree of the fineness of a crystal structure which have never been achieved by a conventional pressure sintering method and is markedly improved in deflection force, which has resulted in the significant decrease in the occurrence of particle defects.

Material: Tungsten

Condition:ground

Application:PVD coating industry,x-ray tube and so on.